FRAM（Ferroelectronic Random Access memory）is high-performance and low-power non-volatile memory that combines the benefits of conventional non-volatile memories, such as Flash and EEPROM, and high speed RAM(SRAM and DRAM). FRAM is non-volatile, but operates in other respects like RAM.
This universal memory outperforms exisiting memories like EEPROM and FLASH, consumes less power, is many times faster, and has greater endurance to multiple read-and-write operations.
Speficially, FRAM delivers write and read access times in the 2-to 3-digital nonosecond range, making its performance comparable to standard RAM.
The Maxium number of read/write cycles for FLASH and EEPROM is about 100,000 times. With more than 1 trillion read/write cycles, the lifecycles of an FRAM memory is essentially unlimited.
Advantage of FRAM
High-speed access: FRAM is 30 times faster than EEPROM.
High endurance: FRAM provides million times higher endurance over EEPROM. Low power consumtion:FRAM offers 200 times lower power consumption than EEPROM.
Excellent tamper resitance:FRAM integrates excellent tamper-prevention techiniques. Data written in FRAM cannot be detected by physical analysis.
Radation resistance: FRAM is high resistant to magnetic fields and radiation.
Operation temperature range:FRAM has an operating temperature range of -40℃ to +85℃.
Data retention: FRAM can retain data for 10 years without a battery.
Demand for FRAM is rapidly increasingly in many applications that require high performance,low power and high endurance. FRAM is an excellent alternative to EEPROM for low-power,data-logging applications where it is essential to prevent any data loss, even in the event of a sudden power off. Other applications include smart cards, RFID, security, industrial systems, factory automation and metering equipments.
FRAM can ideally replace all battery back-up solutions and en-able enviormentally friendly products. The ferroelectronic material in FRAM is high resistant to magnetic fields and radation, making it well-suited for medical, aerospace and food applications.
FRAM combines that benefits of FLASH/EEPROM and SRAM/DRAM.
Fujitsu provide standalone FRAMs and FRAMs for RFIDs as well as COT, foundry and custom design service.
Standalone FRAM can be integrated into any system that requires high-speed, non-volatile memory. FRAM does not require a battery to back-up its data. This saves significant cost and board space. FRAM can be used for storing settings, configuration and device status information. This information can be used later for activities such as resetting the devices, analyzing the status and activating recovery actions. Byte-wise random access makes memory management more efficient.
This high-speed, non-volatile memory runs like a RAM. This gives programmers the flexibility to assign RAM and ROM memory mapping, depending on their needs. End users can program FRAM at the ground level, to customize to their individual perferences. Standalone FRAM allows designers the freedom to explore and employ FRAM in a wide rang of designs.
FRAM-based Radio Frequency Identity(RFID) Chip
The industry is no longer satisfied with the limited information available through magnetic strips or barcodes. Larger amounts of information-including ID, historical records, and tracking-records-are required to be stored with each individual product. Traceability at different stage of the supply chain is essential to ensure quality products, where high security and low-power consumption are important. The Fujitsu family of high-density, FRAM-based RFID products enables robust tracking applications. Since FRAM has tolerance against radiation, these RFID chips are suitable for various medical and phamaceutial applications where gamma sterlization and an autoclave are ofen required.
Logistics, supply chain management, passenger tickets, subscriptions cards, factory automation access control, medical and food-industry applications, sensor and data logging maintenance tracking.
FRAM memory device with UHF RF and SPI interface
The MB97R803A/B is available in two types, a conventional contactless EPC global RFID product with and additional contact-based SPI interface. This dual-interface device can be implemented as part of a microcontroller-based embedded system. Data captured by the sensors and MCU can be stored in the FRAM device. The user can easily access this data using contactless UHF interface, or can transfer configurations and control data to the embedded system via the RF field. The dual-interface FRAM is used in applications such as logistic tracking system, data-logging devices, information displays and wireless tracking.
Advantages of FRAM and RFID
Range: Due to the low power consumption of FRAM, the operating range can be improved within a given filed strength or power density.
Speed and high capacity: FRAM memories can be written as fast as they can be read. The high-speed access and low-power consumption allow the design of high-capacity RFID chips suitable for data logging.
Almost unlimited read/write times: with read/write endurance of 1 trillion cycles, FRAM is more durable and suitable for applications that require high frequent rewriting.
Gamma radiation hardness: Unlike EEPROM, FRAM does not lose its contents due to radition exposure. Therefore, FRAM-based RFID tags are ideally suited for medical or food-industry applications where sterlization is performed by irradation. FRAM data is protected against up to 50kg gamma ray sterlization, a dosage that is rarely necessary.
4K byte FRAM
Contactless interface: ISO/IEC 18000-6, EPC global C1G2, 860MHz-960MHz optional 2MHz SPI interface Anti-collision algorithm password protection.
Bulk memory transfer commands
Logistic tracking system, data-logging devices information dislays, wirelss tracking
Fujitsu FRAM Leadership
Fujitsu has a proven track record of designing and manufacturing high-quality, high reliable FRAM products. Fujitsu was the first company in the industry to embed FRAM into CMOS logic in 1998 and to release production quantities in 1999. The industry's largest FRAM supplier, Fujitsu has shipped more than 30 million FRAM devices. Fujitsu's FRAM devices are produced at its Mie, Japan plant, which is ISO9002/ISO 14001 certified.
The company's ability to control design, manufacturing process technology, and production schedules can ensure a more reliable and stable supply to meet the increasing demand for FRAM products.