MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS256B adopts the Serial Peripheral Interface (SPI).
The MB85RS256B is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS256B can be used for 1012 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS256B does not take long time to write data like Flash memories or E2PROM, and MB85RS256B
takes no wait time.
• Bit configuration : 32,768 words × 8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency : All commands except READ 33 MHz (Max)
READ command 25 MHz (Max)
• High endurance : 1012 times / byte
• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current 6 mA (Typ@33 MHz)
Standby current 9 μA (Typ)
• Operation ambient temperature range : -40 °C to +85 °C
• Package : 8-pin plastic SOP (FPT-8P-M02)
As high-speed data communication advances and data is transmitted more frequently, the need for non-volatile memory that can withstand such frequent data recording operation increases. In addition, faster writing speed that enables data to be recorded without error even in the event of a sudden power outage by an accident is required for memory. Fujitsu FRAM is one of memory devices with the features of high read/write endurance and fast writing speed required in this new era of IoT, automotive, industrial(for facility and infrastructure), smart meters, enterprise, consumer, medical, networking.