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MB85AS12MTPW-GAERE1

极小工作电流的非易失性存储器

ReRAM
(电阻式随机存取存储器)

富士通ReRAM具有业界最小的读取电流。最适合于助听器等电池供电的小型可穿戴设备。
内存或E2PROM。

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Memory ReRAM 12M (1536 K x 8) Bit SPI MB85AS12MT

DESCRIPTION

MB85AS12MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864words 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.MB85AS12MT adopts the Serial Peripheral Interface (SPI).MB85AS12MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS12MT can be used for 5 105 rewrite operations. 

FEATURES 

• Bit configuration : 8 Mbits (1,572,864 words 8 bits) 

• Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) 

• Write buffer size : 256 bytes 

• Operating frequency : 10 MHz (Max) 

• Data endurance : 5 105 times / 4bytes* 

*4 bytes are selected by A1 to A0. 

• Data retention : 10 years (+85 C) 

• Operating power supply voltage : 1.6 V to 3.6 V 

• Operating power supply current : Write current 1.5 mA (Typ) Read current 0.15 mA (Typ@5 MHz) Standby current 65 A (Typ) Sleep current 6 A (Typ) 

• Operation ambient temperature range : -40 C to +85

• Package : 11-pin WLPRoHS compliant

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