代理产品线 > 富士通铁电存储 > MB85AS8MTPW-G-KBAERE1

MB85AS8MTPW-G-KBAERE1

极小工作电流的非易失性存储器

ReRAM
(电阻式随机存取存储器)

富士通ReRAM具有业界最小的读取电流。最适合于助听器等电池供电的小型可穿戴设备。
内存或E2PROM。

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Memory ReRAM 8M (1024 K x 8) Bit SPI MB85AS8MT

DESCRIPTION

MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576 

words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies

for forming the nonvolatile memory cells. 

MB85AS8MT adopts the Serial Peripheral Interface (SPI). 

MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85AS8MT can be used for 1 x 106 rewrite operations.

FEATURES 

• Bit configuration : 8 Mbits (1,048,576 words 8 bits) 

• Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) 

• Write buffer size : 256 bytes 

• Operating frequency : 10 MHz (Max)

• Data endurance : 1 106 times / 4bytes* 

                            *4 bytes are selected by A1 to A0. 

• Data retention : 10 years (+85 C) 

• Operating power supply voltage : 1.6 V to 3.6 V 

• Operating power supply current : Write current 1.5 mA (Typ) 

                                                       Read current 0.15 mA (Typ@5 MHz) 

                                                       Standby current 60 A (Typ) 

                                                       Sleep current 6 A (Typ) 

• Operation ambient temperature range : -40 C to +85

• Package : 8-pin plastic SOP, 11-pin plastic WLPRoHS compliant

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