MB85R4M2TFN-G-JAE2

 DESCRIPTIONS

The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R4M2T uses a pseudo-SRAM interface.

 FEATURES

• Bit configuration : 262,144 words × 16 bits

• LB and UB data byte control : Available Configuration of 524,288 words × 8 bits

• Read/write endurance : 1013 times / 16 bits

• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power operation : Operating power supply current 20 mA (Max)

                                        Standby current 150 μA (Max)

                                         Sleep current 20 μA (Max)

• Operation ambient temperature range : − 40 °C to + 85 °C

• Package : 44-pin plastic TSOP (FPT-44P-M35) RoHS compliant

■ APPLICATIONS
As high-speed data communication advances and data is transmitted more frequently, the need for non-volatile memory that can withstand such frequent data recording operation increases. In addition, faster writing speed that enables data to be recorded without error even in the event of a sudden power outage by an accident is required for memory. Fujitsu FRAM is one of memory devices with the features of high read/write endurance and fast writing speed required in this new era of IoT, automotive, industrial(for facility and infrastructure), smart meters, enterprise, consumer, medical, networking.