MB85RC16PNF-G-JNERE1

The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16 have at least 1012 Read/Write operation endurance per byte, which is a significant improvement over the number of read/write operations than by other nonvolatile memory products. The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM.
■ FEATURES • Bit configuration : 2,048 words × 8 bits • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). • Operating frequency : 1 MHz (Max) • Read/Write endurance : 1012 times/byte • Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C) • Operating power supply voltage : 2.7 V to 3.6 V • Low power consumption : Operating power supply current 70 μA (Typ @1 MHz) Standby current 0.1 μA (Typ) • Operation ambient temperature range : − 40 °C to + 85 °C • Package : 8-pin plastic SOP (FPT-8P-M02) 8-pin plastic SON (LCC-8P-M04) RoHS compliant
■ APPLICATIONS
As high-speed data communication advances and data is transmitted more frequently, the need for non-volatile memory that can withstand such frequent data recording operation increases. In addition, faster writing speed that enables data to be recorded without error even in the event of a sudden power outage by an accident is required for memory. Fujitsu FRAM is one of memory devices with the features of high read/write endurance and fast writing speed required in this new era of IoT, automotive, industrial(for facility and infrastructure), smart meters, enterprise, consumer, medical, networking.