Fujitsu Memory FRAM MB85RS1MT

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Fujitsu Memory FRAM MB85RS1MT

MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072
words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS1MT adopts the Serial Peripheral Interface (SPI).
The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes
no wait time.
shared:

MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072

words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS1MT adopts the Serial Peripheral Interface (SPI).

The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes

no wait time.

■ FEATURES

• Bit configuration : 131,072 words  8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max)

2.7 V to 3.6 V, 30 MHz (Max)

For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)

• High endurance : 1013 times / byte

• Data retention : 10 years (+85 C), 95 years ( + 55 C), over 200 years (  +35 C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 9.5 mA (Max@30 MHz)

Standby current 120 μA (Max)

Sleep current 10 μA (Max)

• Operation ambient temperature range : -40 C to +85 C

• Package : 8-pin plastic SOP 150mil

8-pin plastic DFN 5mm x 6mm

RoHS compliant

■ APPLICATIONS
As high-speed data communication advances and data is transmitted more frequently, the need for non-volatile memory that can withstand such frequent data recording operation increases. In addition, faster writing speed that enables data to be recorded without error even in the event of a sudden power outage by an accident is required for memory. Fujitsu FRAM is one of memory devices with the features of high read/write endurance and fast writing speed required in this new era of IoT, automotive, industrial(for facility and infrastructure), smart meters, enterprise, consumer, medical, networking.

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