MB85RQ8MLXPF-G-BCERE1

■ DESCRIPTION MB85RQ8MLX is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 1,048,576 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RQ8MLX adopts the Quad Serial Peripheral Interface (QSPI) which can realize a high bandwidth such as Read and Write at 54 MB/s using four bi-directional pins (Quad I/O). The MB85RQ8MLX is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RQ8MLX can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RQ8MLX does not take long time to write data like Flash memories or E2PROM. MB85RQ8MLX is able to write data at a high bandwidth without any waiting time and fits perfectly into Networking, Gaming, Industrial computing, Camera, RAID controllers, etc.
■ FEATURES
• Bit configuration : 1,048,576 words x 8 bits
• Serial Peripheral Interface : SPI (Serial Peripheral Interface) / Dual SPI / Quad SPI Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Write supports : Single data input / Dual data input / Dual address and data input / Quad data input / Quad address and data input / DPI mode / QPI mode
• Read supports : Single data output / Fast single data output / Fast dual data out put / Fast dual data out put and data out put / Fast quad data output / Fast quad address input and data output / DPI mode / QPI mode / XIP mode
• Operating frequency : 108 MHz (Except normal READ command)
• High endurance : 1013 Read/Write per byte
• Data retention : 10 years (+105 C), 95 years ( + 55 C), over 200 years ( + 35 C)
• Operating power supply voltage : 1.7 V to 1.95 V (Single power supply)
• Power consumption : Operating power supply current TBD. mA (Typ@Quad I/O 108 MHz) Standby current TBD. μA (Typ), TBD. μA (Max) • Operation ambient temperature range : -40 C to +105 C
• Package : 16-pin plastic SOP RoHS compliant

■ APPLICATIONS
As high-speed data communication advances and data is transmitted more frequently, the need for non-volatile memory that can withstand such frequent data recording operation increases. In addition, faster writing speed that enables data to be recorded without error even in the event of a sudden power outage by an accident is required for memory. Fujitsu FRAM is one of memory devices with the features of high read/write endurance and fast writing speed required in this new era of IoT, automotive, industrial(for facility and infrastructure), smart meters, enterprise, consumer, medical, networking.