MB85RS16PNF-G-JNERE1

■ DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.MB85RS16 adopts the Serial Peripheral Interface (SPI).The MB85RS16 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS16 can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.MB85RS16 does not take long time to write data like Flash memories or E2PROM, and MB85RS16 takes no wait time.

■ FEATURES

• Bit configuration : 2,048 words × 8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 20 MHz (Max)

• High endurance : 1 trillion Read/Writes per byte

• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 2.7 V to 3.6 V

• Low power consumption : Operating power supply current 1.5 mA (Typ@20 MHz)Standby current 5 μA (Typ)

• Operation ambient temperature range : − 40 °C to +85 °C

• Package : 8-pin plastic SOP (FPT-8P-M02) RoHS compliant

■ APPLICATIONS
As high-speed data communication advances and data is transmitted more frequently, the need for non-volatile memory that can withstand such frequent data recording operation increases. In addition, faster writing speed that enables data to be recorded without error even in the event of a sudden power outage by an accident is required for memory. Fujitsu FRAM is one of memory devices with the features of high read/write endurance and fast writing speed required in this new era of IoT, automotive, industrial(for facility and infrastructure), smart meters, enterprise, consumer, medical, networking.